20th Brazilian Workshop On Semiconductor Physics

Session

Oral

15 sept. 2022, 09:30

Instituto Tecnológico de Aeronáutica

Documents de présentation

Abstract RSPessoa - BWSP2022 - Rodrigo Sávio Pessoa.pdf

21. Growth of Al2O3 thin films using plasma-activated deionized water as a new oxidant in thermal atomic layer deposition process

Prof. R. S. Pessoa (Plasma and Processes Laboratory - Aeronautics Institute of Technology)

15/09/2022 09:30

Abstract

The atomic layer deposition (ALD) of metallic oxides, mainly alumina (Al2O3), when performed in thermal mode uses deionized water (DI) as oxidant source and trimethylaluminum (TMA) as a metal reactant. However, growth per cycle (GPC) of Al2O3 thin films for the reactant and co-reactant mentioned above is limited to 0.1 nm/cycle [1]. This barrier in the GPC is overcome by using...