Prof.
R. S. Pessoa
(Plasma and Processes Laboratory - Aeronautics Institute of Technology)
15/09/2022 09:30
Abstract
The atomic layer deposition (ALD) of metallic oxides, mainly alumina (Al2O3), when performed in thermal mode uses deionized water (DI) as oxidant source and trimethylaluminum (TMA) as a metal reactant. However, growth per cycle (GPC) of Al2O3 thin films for the reactant and co-reactant mentioned above is limited to 0.1 nm/cycle [1]. This barrier in the GPC is overcome by using...
