20th Brazilian Workshop On Semiconductor Physics

Session

Oral

Non programmé

Instituto Tecnológico de Aeronáutica

Documents de présentation

BWSP_20th_Moujaes - Elie Moujaes.pdf

24. Pd-based dichalcogenides: the 1T and the novel 1OT regular and Janus structures: from electronic to thermal properties

Prof. Elie A. Moujaess (Physics department - Federal University of Rôndonia)

Abstract

The discovery of two dimensional (2D) graphene has opened the doors to investigate a myriad of new 2D materials that have better characteristics. Out of these are the transition metal dichalcogenides (TMDs). In this talk, I will shine light on the electronic, optical and thermal properties of the 1T [1] Pd-based dichalcogenides, namely PdS2, PdSe2, PdSSe, PdSTe, and PdSeTe systems,...

25. Structural and electronic properties of III-Nitrides, MoS2 and MoSe2: From bulk polytypes to 2D structures

Prof. Horacio W. Leite Alves (Departamento de Ciências Naturais - Universidade Federal de São João del Rei)

While it is well known that the III-Nitrides are the materials for the highly efficient light-emitting diodes, among other optoelectronic devices, the transition metal dichalcogenides (TMDC) also offer a great potential use in the field of 2D materials with interesting electronic and optoelectronic properties. In the case of III-Nitrides, the interest on these materials was renewed, now as a...