Séminaires

R&D for ATLAS planar pixels for HL-LHC

par Marco Bomben (LPNHE - Laboratoire de Physique Nucléaire et de Hautes Energies - ATLAS)

Europe/Paris
Amphithéâtre (CPPM)

Amphithéâtre

CPPM

Description
The ATLAS detector is one of two large general-purpose detectors designed to probe new physics at the Large Hadron Collider at CERN. The ATLAS detector consists of muon spectromers, hadronic and electromagnetic calorimeter and a tracker, the Inner Detector (ID). The Pixel detector is the innermost part of the ID (and so of the ATLAS detector) and is the most important detector used in the identification and reconstruction of secondary vertices from the decay of, for example, particles containing a b-quark or for b-tagging of jets. The ATLAS Inner Detector is currently only compatible with LHC-design luminosity of 10^34 cm^-2 s^-1. To extend the physics reach of the LHC, upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5 to 10. To cope with the increased occupancy and radiation damage, the ATLAS experiment plans to introduce an all-silicon inner tracker with the HL-LHC upgrade. For radiation damage reasons, only electron-collecting sensor designs are considered (n-in-p and n-in-n). To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS) was established comprising 17 institutes and more than 80 scientists. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. The presentation will give an overview of the recent accomplishments of the R&D project. Among these are in particular testbeam results obtained with irradiated FE-I3 and FE-I4 pixel detectors and developments in the field of slim and active edges.
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